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| MMDT3904 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A C2 B1 E1 SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 -- 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 B C D F M Mechanical Data * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) K E2 B2 C1 0.65 Nominal H H J K L M J D C2 B1 E1 F L All Dimensions in mm E2 B2 C1 * Maximum Ratings @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol VCBO VCEO VEBO IC (Note 1) Pd RJA Tj, TSTG Value 60 40 6.0 200 200 625 -55 to +150 Unit V V V mA mW C/W C Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout documents APO2001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30088 Rev. 14 - 2 1 of 4 www.diodes.com MMDT3904 (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 5.0 Max 50 50 300 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 5.0 Unit V V V nA nA Test Condition IC = 10A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 -4 DC Current Gain hFE 40 70 100 60 30 0.65 1.0 0.5 100 1.0 300 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 5. Short duration pulse test used to minimize self-heating. VCE(SAT) VBE(SAT) V V Cobo Cibo hie hre hfe hoe fT NF pF pF k x 10 S MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100A, RS = 1.0k, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA td tr ts tf 35 35 200 50 ns ns ns ns DS30088 Rev. 14 - 2 2 of 4 www.diodes.com MMDT3904 (c) Diodes Incorporated 200 PD, POWER DISSIPATION (mW) 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 150 10 100 5 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs. Ambient Temperature (Total Device) 200 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1,000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 100 0.1 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current 1,000 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1,000 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30088 Rev. 14 - 2 3 of 4 www.diodes.com MMDT3904 (c) Diodes Incorporated Ordering Information Device MMDT3904-7-F Notes: 6. (Note 6) Packaging SOT-363 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K6N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30088 Rev. 14 - 2 4 of 4 www.diodes.com MMDT3904 (c) Diodes Incorporated |
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